GaN Enhancement mode High Electron Mobility Transistor (E-HEMT):• Lateral 2DEG (2-dimensional electron gas) channel formed between AlGaN and GaN layers• Positive gate bias opens up 2DEG chan
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GaN Enhancement mode High Electron Mobility Transistor (E-HEMT):• Lateral 2DEG (2-dimensional electron gas) channel formed between AlGaN and GaN layers• Positive gate bias opens up 2DEG chan
from Display Plus http://ift.tt/29aRnv6